北京大学团队研发出全球首款二维GAAFET晶体管，以铋材料突破接触电阻量子极限，开启后摩尔时代。这项成果在《自然》发表，实测性能超越国际巨头，二维堆叠技术使中国半导体站上1纳米制程竞争最前沿。 近年来，随着半导体行业的不断发展，摩尔定律逐渐 ...

As technologies and foundry process nodes continue to advance, it gets more difficult to design and verify integrated circuits (ICs). The challenges become even more apparent in 5nm and below nodes, ...

The CPU space, at least on the Intel and AMD side, hasn't been particularly interesting over the last few years. Sure, you got the customary increments to AMD's Ryzen X3D processors, and some ...